Accueil » recherche » Publications

2. Silicon nanowires become CMOS compatible.
V. T. Renard and V. Jousseaume
Small Times February 17th, 2010
1. Quantum point contacts: unexpected collisions
V.T. Renard et al.
Nature Asia-Pacific July 9th, 2008. 13. Impact of Valley Polarization on the Resistivity in Two Dimensions.
K. Takashina, Y. Niida, V. T. Renard , A. Fujiwara, T. Fujisawa, K. Muraki, and Y. Hirayama
Phys. Rev. lett. 106, 196403 (2011)
12. Few-layer Graphene/Carbon Nanotube Epitaxial-Interface Grown at CMOS-compatible Temperature.
V. Jousseaume, J. Cuzzocrea, N. Bernier, V. T. Renard
Applied physics letters 98, 123103 (2011) ArXiv
11. Coulomb pseudogap in scattering-assisted tunneling of electrons between Landau-quantized two-dimensional electron gases.
V. G. Popov , O. N. Makarovskiyc , V. T. Renard, J.-C. Portal
Physica E 43, 151 (2010) ArXiv
10. Catalyst preparation for CMOS-compatible silicon nanowire synthesis.
V. T. Renard, M. Jublot, P. Gergaud, P. Cherns, D. Rouchon, A. Chabli, V. Jousseaume
Nature Nanotechnology, 4, 654 (2009) ArXiv
9. Boundary mediated electron-electron interaction in quantum point contacts.
V. T. Renard, O. A. Tkachenko, V. Tkachenko, T. Ota, N. Kumada, J-C. Portal, Y. Hirayama
Phys. Rev. Lett. 100, 186801 (2008) arXiv
8. Electron transport through antidot superlattices in Si/SiGe heterostructures: new magnetoresistance resonances in lattices with large diameter antidots.
E. B. Olshanetsky, V. T. Renard, Z. D. Kon, J-C. Portal, J-M Hartmann
Euro. Phys. Lett. 76, 657 (2006) ArXiv
7. Quantum corrections to the conductivity and Hall coefficient of a two-dimensional electron gas in a dirty AlGaAs/GaAs/AlGaAs quantum well: transition from diffusive to ballistic regime.
V. T. Renard, I. V. Gornyi, O. Tkachenko, V. A. Tkachenko, Z. D. Kvon, E. B. Olshanetsky, A. I. Toropov, J-C. Portal
Phys. Rev. B, 72, 075313 (2005) ArXiv
6. Negative quasiclassical magnetoresistance in a high density two-dimensional electron gas in a AlxGa1-xN/GaN heterostructure.
H-I. Cho, G. M. Gusev, Z. D. Kvon, V. T. Renard, J-H. Lee, J-C. Portal
Phys. Rev. B 71, 245323 (2005)
5. Interaction induced transverse magnetoresistance with a temperature dependent sign in a n-Si/SiGe heterostructure.
E.B Olshanestsky, V. T. Renard, Z.D Kvon, J.C Portal, N.J Woods, J. Zhang, J.J Harris
Euro. Phys. Lett. 71, 665 (2005)
4. Large positive quasi-classical magneto-resistance in high mobility 2D electron gas: interplay of short- and long-range disorder.
V. Renard, Z. D. Kvon, G. M. Gusev, J. C Portal
Phys. Rev. B 70, 033303 (2004) ArXiv
3. Reduced pressure chemical vapor deposition of SiGe virtual substrates for high mobility devices.
J.M.Hartmann, Y. Bogumilowicz, P. Holliger, F. Laugier, R. Truche, G. Rolland, M. N. Semeria, V. Renard, E. B. OLshanetsky, O. Estibals, Z. D. Kvon, J. C. Portal, L.Vincent, F. Cristiano, A. Claverie
Semiconductor Science and Technology, Vol. 19, N°3, pp.311-318, (2004)
2. Conductance of a Multiterminal Ballistic Wire
Z. D. Kvon, V. A. Tkachenko, A. E. Plotnikov, V. A. Sablikov, V. Renard, and J. C. Portal
JETP Lett. 79, 36 (2004)
1. Conductivity of a two-dimensional electron gas in Si/SiGe heterostructure near the metal-insulator transition: role of the short- and long-range scattering potential.
E.B Olshanetsky, V. Renard, Z.D Kvon, J.C Portal, N.J Woods, J. Zhang, J.J Harris
Phys. Rev. B. 68, 085304 (2003) ArXiv